Jerry L Hudgins

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Jerry L Hudgins

Professor of Electrical & Computer Engineering and Interim Executive Director Jeffrey S. Raikes School of Computer Science and Management University of Nebraska-Lincoln

Contact

Address
123A Kauffman Center
Phone
402-472-6000 On-campus 2-6000
Email
jhudgins2@unl.edu

Professor Jerry L. Hudgins is a native of West Texas.  Dr. Hudgins was on the faculty of the Electrical and Computer Engineering Department at the University of South Carolina prior to joining the University of Nebraska in 2004.  Dr. Hudgins was Chair of the Electrical and Computer Engineering Department from 2004-2025. He was also Interim Director of the Nebraska Center for Energy Sciences Research for 2019-2023, having also served as Associate Director for many years. Professor Hudgins is currently the Interim Executive Director of the Jeffrey S. Raikes School of Computer Science and Management.  

Hudgins’ research involves power electronic device characterization and modeling, power electronics design, electronics packaging, and renewable energy systems. In 2000, he was named as an IEEE Third Millennium Medal recipient for "Outstanding Contributions in the area of Power Electronics." Dr. Hudgins is a Life Fellow of the IEEE, a past member of the IEEE Board of Directors (Division II Director and IEEE Treasurer), and a current member of the IEEE Foundation Board of Directors.  Dr. Hudgins served as the President of the IEEE Power Electronics Society (PELS) for the years of 1997 and 1998, and as President of the IEEE Industry Applications Society (IAS) in 2003.  Dr. Hudgins has worked with numerous industries and published more than 165 technical papers, books, and book chapters concerning power semiconductors, electronic packaging, power electronics, renewable energy systems, and engineering education.  jhudgins2@unl.edu

Education

Jerry has BSEE (Electrical Engineering) 1980, and MSEE (Master of Science in Electrical Engineering) 1982, degrees from Texas Tech University in Lubbock, TX. He also received a Ph.D. degree in electrical engineering in 1985 from Texas Tech.

  1. “A Physics-Based Temperature Dependent Analytical Model for 2DEG Density in AlGaN/GaN HEMT Devices,” K.T. Nabila and J.L. Hudgins, IEEE Applied Power Electronics Conference Record, March16-20, 2025, Atlanta, GA.
  2. “A Scalable Dual-Orthogonal-Cooling Packaging Concept for Parallel-Series SiC Chips,” E. Muravleva, Y. Abotaleb, B. Anderson, J.L. Hudgins, J. Wang, Z. Zhang, B. Zhang, IEEE Applied Power Electronics Conference Record, pp. 1850-1857, March16-20, 2025, Atlanta, GA.
  3. “Automated extraction of low-order thermal model with controllable error bounds for SiC MOSFET power modules,” C. Entzminger, W.Qiao, L. Qu, and J.L. Hudgins, IEEE Trans. Power Electronics, vol. 39, no. 1, pp. 538-551, January 2024. DOI: 10.1109/TPEL.2023.3318580
  4. “Oxide failures in SiC power MOSFETs,” Z. Wehri, V. Godbold, M. Schlegel, and J.L. Hudgins, Proc. Of the IEEE Energy Conversion Congress and Exposition (ECCE), pp. 5776-5783, Oct. 29-Nov. 2, 2023, Nashville, TN. DOI: 979-8-3503-1644-5
  5. “Switch cell design for novel high-frequency press-pack SiC FET modules,” E. Muravleva, B. Canbaz, J. Wang, L. Qu, and J. Hudgins, Proc. Of the IEEE Energy Conversion Congress and Exposition (ECCE), pp. 5455-5461, Oct. 29-Nov. 2, 2023, Nashville, TN.
  6. “Design and optimization of a novel monolithic spring for high-frequency press-pack SiC FET modules,” B. Canbaz, E. Muravleva, J. Wang, L. Qu, and J. Hudgins, Proc. Of the IEEE Energy Conversion Congress and Exposition (ECCE), pp. 5551-5557, Oct. 29-Nov. 2, 2023, Nashville, TN.
  7. “Femtosecond-laser sharp shaping of millimeter-scale geometries with vertical sidewalls,” Q. Zhu, P. Fan, N. Li, T. Carlson, B. Cui, J-F Silvain, J.L. Hudgins, and Y. Lu, International Journal of Extreme Manufacturing, vol. 3, pp. 1-12, November, 2021, DOI: 10.1088/2631-7990/ac2961. 
  8. “Precise Micromachining and Depth-controlled Material Removal on Printed Circuit Boards Using A Multitasking Femtosecond Laser Machining Center,” T. Carlson, N. Li, P. Fan, A. Wolf, A. Ferguson, J.L. Hudgins, and Y. Lu, Laser Institute of America International Congress on Applications of Lasers & Electro-Optics (ICALEO), Oct. 19-20, 2020.
  9. “A Datasheet Driven Unified Si/SiC Compact IGBT Model for N-channel and P-channel Devices,” S. Perez, R. Kotecha, S. Ahmed, A. Ur-Rashid, M.M. Hossain, T. Vrotsos, A.M. Francis, H.A. Mantooth, E. Santi, and J.L. Hudgins, IEEE Trans. on Power Electronics, vol. 34, no. 9, pp. 8329-8341, September 2019, ISSN: 0885-8993 Online ISSN: 1941-0107 Digital Object Identifier: 10.1109/TPEL.2018.2889263
  10. “A Circuit for Testing dv/dt Immunity of Isolated Drivers and Current Sense Amplifiers,” T. Gachovska, G. Scarlatescu, and J.L. Hudgins, IEEE Energy Conversion Congress and Exposition (ECCE) Record, pp. 3298-3302, 29 September – 4 October 2019, Baltimore, MD.
  11. “A High-Accuracy, Low-Order Thermal Model of SiC MOSFET Power Modules Extracted from Finite Element Analysis via Model Order Reduction,” C. Entzminger, W. Qiao, L. Qu and J.L. Hudgins, IEEE Energy Conversion Congress and Exposition (ECCE) Record, pp. 4950-4954, 29 September – 4 October 2019, Baltimore, MD.
  12. “Converting Waste Vehicle Aerodynamic Energy into Electricity,” M. Penne, W. Qiao, and J.L. Hudgins,  IEEE Energy Conversion Congress and Exposition (ECCE) Record, pp. 416-422, 23-27 September 2018, Portland, OR.
  13. “Bearing Fault Diagnosis of Direct-Drive Wind Turbines Using Multiscale Filtering Spectrum,” J. Wang, Y. Peng, W. Qiao, and J.L. Hudgins, IEEE Trans. Industry Applications, vol. 53, no. 3, pp. 3029-3038, May-June 2017. Print ISSN: 0093-9994, Online ISSN: 1939-9367, Digital Object Identifier: 10.1109/TIA.2017.2650142
  14. “SiC and GaN Power Semiconductor Devices,” T. Gachovska and J.L. Hudgins, PowerElectronics Handbook, 4th edition, M.H. Rashid, ed., Elsevier, 2017.
  15. “Thyristors,” T. Gachovska and J.L. Hudgins, PowerElectronics Handbook, 4th edition, M.H. Rashid, ed., Elsevier, 2017.
  16. “Determination ofappropriate power forsmall wind turbines on farms,” E.A. Muravleva, S.P. Rudobashta, J. Hudgins, Scientific Journal VESTNIK ofFederal State Educational Institution of Higher Professional Education, "Moscow State Agroengineering University named after. V.P.Goryachkina,” vol. 78, no. 2, pp. 54-59, Mar-Apr, 2017, ISSN 1728-7936.
  17. “Algorithm of choosing small wind turbine for farms,” E.A. Muravleva, S.P. Rudobashta, J.L. Hudgins, Scientific Journal VESTNIK of Federal State Educational Institution of Higher Professional Education, "Moscow State Agroengineering University named after. V.P.Goryachkina,” vol. 77, no. 1, pp. 41-44, Jan-Feb, 2017, ISSN 1728-7936.
  18. “A real time thermal model for monitoring of Power Semiconductor Devices,” T.G. Gachovska, B. Tian, J.L. Hudgins, W. Qiao, and J.F. Donlon, IEEE Trans. Industry Applications, vol. 51, no. 4, pp. 3361-3367, July/August 2015.
  19. “Modeling of Wide-Bandgap Power Semiconductor Devices—Part I,” H.A. Mantooth, K. Peng, E. Santi, and J.L. Hudgins, IEEE Trans. Electron Devices, vol. 62, no. 2, pp. 423-433, Feb. 2015. (Invited Paper)
  20. “Modeling of Wide-Bandgap Power Semiconductor Devices—Part II,” E. Santi, K. Peng, H.A. Mantooth, and J.L. Hudgins, IEEE Trans. Electron Devices, vol. 62, no. 2, pp. 434-442, Feb. 2015. (Invited Paper)
  21. “Comparison of the forward voltage drop of Si and SiC high voltage diodes,” T.K. Gachovska and J.L. Hudgins, Electro-Chemical Society and Sociedad Mexicana de Electroquímica (SMEQ) Joint International Meeting Proceedings, Oct. 5-9, 2014, Cancun, Mexico.      Re-published in Electrochemical Society Transactions, vol. 6, no. 7, pp. 223-236, Oct. 2014.
  22. “Characterization of GaN switches for solar inverters,” T.K. Gachovska, C. Cojocaru, N. Radimo, A. Mukherjee, and  J.L. Hudgins, Electro-Chemical Society and Sociedad Mexicana de Electroquímica (SMEQ) Joint International Meeting Proceedings, Oct. 5-9, 2014, Cancun, Mexico.      Re-published in Electrochemical Society Transactions, vol. 6, no. 7, pp. 273-279, Oct. 2014.
  23. “Design Optimization of Single-sided Axial Flux Permanent Magnet Machines by Differential Evolution,” X. Yang, D.J. Patterson, and J.L. Hudgins, IEEE International Conference on Electric Machierns (ICEM) Proc., Sept. 2-5, 2014, Berlin, Germany.
  24. “Testing of diode-clamping in an inductive pulsed plasma thruster circuit,” A. Toftul, K.A. Polzin, A.K. Martin, and J.L. Hudgins, AIAA/ASME/SAE/ASEE Joint Propulsion Conference Record, July 28-30, 2014, Cleveland, OH.
  25. “Monitoring IGBT’s health condition via junction temperature variations,” B. Tian, W. Qiao, Z. Wang, T. Gachovska, and J.L. Hudgins, in Proc. 29th Annual IEEE Applied Power Electronics Conference and Exposition (APEC 2014), Fort Worth, TX, USA, Mar. 16-20, 2014.
  26. Transient Electro-Thermal Modeling of Bipolar Power Semiconductor Devices, Tanya K. Gachovska, Bin Du, Jerry L. Hudgins, Enrico Santi, 1st ed., Morgan & Claypool Publishers, 85 pages, ISBN-paperback:9781627051897, ISBN-ebook:9781627051903, December 2013. (book published in Synthesis Lectures on Power Electronics).
  27. “Optimization of Forward Voltage Drop for Si, SiC, and GaN High Voltage Diode,” T.K. Gachovska and J.L. Hudgins, World Academic Publishing Inc., Consumer Electronics Times (CET), vol. 2, issue 4, pp. 163-174, Oct. 2013.
  28. “Multi-Objective Design Optimization of a Single-sided Axial Flux Permanent Magnet Machine,” X. Yang, D. Patterson, and J.L. Hudgins, IEEE International Conference on Electric Machines and Systems (ICEMS) Proc., pp. 822-825, 26-29 Oct. 2013, Busan, Korea.
  29. “FEA Estimation and Experimental Validation of Solid Rotor and Magnet Eddy Current Loss in Single-Sided Axial Flux Permanent Magnet Machines,” X. Yang, D. Patterson, J. Hudgins, and J. Colton, IEEE Energy Conversion Congress and Exposition (ECCE) Record, pp. 3202-3209, 15-19 September 2013, Denver, CO.
  30. “A Real-Time Thermal Model for Monitoring of Power Semiconductor Devices,” T. Gachovska, B. Tian, J. Hudgins, W. Qiao and J. Donlon, IEEE Energy Conversion Congress and Exposition (ECCE) Record, pp. 2208-2213, 15-19 September 2013, Denver, CO.
  31. “Core Loss Measurement In a Fabricated Stator of a Single-sided Axial Flux Permanent Magnet Machine,” X. Yang, D.J. Patterson, and J.L. Hudgins, IEEE International Electric Machines and Drives Conference (IEMDC) Proc., pp. 612-617, 12-15 May 2013, Chicago, IL.
  32. “Carbon Nano-Onion Ultracapacitor Model,” F. Parigi, T. Gachovska, J.L. Hudgins, Y. Zhou, and Y. Lu, Materials Research Society (MRS) Proceedings, 1333 , mrss11-1333-m09-29 doi:10.1557/opl.2011.1341, 1-5 April 2013, San Francisco, CA.
  33. Modeling Bipolar Power Semiconductor Devices, Tanya K. Gachovska, Jerry L. Hudgins, Enrico Santi, Angus Bryant, and Patrick R. Palmer, 1st ed., Morgan & Claypool Publishers, 94 pages, ISBN-10: 162705121X, ISBN-13: 978-1627051217, April 2013. (book published in Synthesis Lectures on Power Electronics)
  34. “Power Electronic Devices in the Future,” J.L. Hudgins, IEEE Jnl Emerging and Selected Topics in Power Electronics (JESTPE), Vol. 1, no. 1, pp. 11-17, March 2013. (Invited Paper)
  35. “Modeling, Simulation and Validation of a Power SiC BJT,” T.K. Gachovska, J.L. Hudgins, A. Bryant, E. Santi, H.A. Mantooth, and A. Agarwal, IEEE Transactions on Power Electronics, vol. 27, Issue 10, pp. 4338-4346, October 2012.
  36. “Impedance-Based Simulation Model of Carbon Nano-Onion Ultracapacitors for e-Bike with Compact Energy Storage System,” F. Parigi, Y. Gao, T. Gachovska, J.L. Hudgins, D. Patterson, and Y. Lu, IEEE Vehicle Power and Propulsion Conference (VPPC) Rec. (VPPC 2012), pp. 1107-1111, November 2012.
  37. “Minimal Energy Storage System using Carbon Nanotube and Nano-onion Ultracapacitors for an Electrified Bike,” F. Parigi, T. Gachovska, T. Kim, Y. Gao, D. Patterson, J.L. Hudgins, and Y. Lu, Proceedings of the IASTED International Conference on Power and Energy Systems, EuroPES 2012, pp.147-153, June 2012.
  38. “Power Semiconductor Devices for High Power Variable Speed Drives,” J.L. Hudgins and R. DeDoncker, IEEE Industry Applications Magazine, vol. 18, no. 4, pp. 18-25, July-August 2012. (invited, peer-reviewed article)
  39. “A High Power, Current Sensorless, Bi-directional, 16-phase Interleaved, dc-dc Converter for Hybrid Vehicle Application,” L. Ni, D. Patterson, and J. Hudgins, IEEE Trans. on Power Electronics, vol. 27, no. 3, pp. 1141-1151, March 2012.
  40. “A Unified Si/SiC IGBT Model,” M. Saadeh, H. A. Mantooth, J.C. Balda, J.L. Hudgins, E. Santi, S.-H. Ryu, and A. Agarwal, IEEE Applied Power Electronics Conference (APEC) Rec., pp. 1728-1733, Orlando, FL, Feb. 2012, Digital Object Identifier: 10.1109/APEC.2012.6166055 .
  41. “Power SiC DMOSFET Model Accounting for Nonuniform Current Distribution in JFET Region,” R. Fu, A. Grekov, J.L. Hudgins, H.A. Mantooth, and E. Santi, IEEE Trans. on Industry Applications, vol. 48, no. 1, pp. 181-190, January-February, 2012.
  42. “A Current-Sensorless MPPT Quasi-Double-Boost Converter for PV Systems,” C. Lohmeier, J. Zeng, W. Qiao, L. Qu, and J. Hudgins, IEEE Energy Conversion Congress and Exposition (ECCE) Record, pp. 1069-1075, 18-22 September 2011, Phoenix, AZ. 
  43. “Investigations on the Aging Effect of Supercapacitors,” F. Parigi, Y. Gao, M. Casares, T. Gachovska, Y.S. Zhou, Y.F. Lu, D. Patterson and J.L. Hudgins, MRS Proceedings, 1333 , mrss11-1333-m09-29 doi:10.1557/opl.2011.1341, Aug. 2011.
  44. “Model for Power SiC Vertical JFET with Unified Description of Linear and Saturation Operating Regimes,” Z. Chen, A.E. Grekov, R. Fu, J.L. Hudgins, H.A. Mantooth, D.C Sheridan, J. Casady, and E. Santi, IEEE Trans. on Industry Applications, vol. 47, no. 4, pp. 1853-1861, July/August 2011.
  45. “Parameter Extraction Procedure for Vertical SiC Power JFET,” A.E. Grekov, Z. Chen, R. Fu, J.L. Hudgins, H.A. Mantooth, D.C Sheridan, J. Casady, and E. Santi, IEEE Trans. on Industry Applications, vol. 47, no. 4, pp. 1862-1871, July/August 2011.
  46. “Wind/solar hybrid generation-based roadway microgrids,” W. Qiao, A. Sharma, J.L. Hudgins, E. Jones, and L. Rilett, IEEE PES General Meeting Rec. 2011, pp. 1-7, Detroit, MI, USA, July 24-29, 2011, Digital Object Identifier: 10.1109/PES.2011.6039884 .
  47. “A Physics-Based Model for a SiC JFET Accounting for Electric-Field-Dependent Mobility," E. Platania, Z. Chen, F. Chimento, A. Grekov, R. Fu, L. Lu, A. Raciti, J.L. Hudgins, H.A. Mantooth, D.C. Sheridan, J. Casady, and E. Santi, IEEE Trans. on Industry Applications, vol. 47, no. 1, pp. 199-211, January/February 2011.
  48. “Physics-Based Model of Planar-Gate IGBT Including MOS Side Two-Dimensional Effects,” L. Lu, A. Bryant, J.L. Hudgins, E. Santi, and P.R. Palmer, IEEE Trans. on Industry Applications, vol. 46, no. 6, pp. 2556-2567, Nov/Dec 2010.
  49. “A High Power, Current Sensorless, Bi-directional, 16 phase interleaved, DC-DC Converter for Hybrid Vehicle Application,” L. Ni, D.J. Patterson and J.L. Hudgins, IEEE Energy Conversion Congress and Exposition (ECCE) Record, pp. 3611-3617, 12-16 September 2010, Atlanta, GA.
  50. “Power SiC DMOSFET Model Accounting for JFET Region Nonuniform Current Distribution,” R. Fu, A. Grekov, J.L. Hudgins, H.A. Mantooth, and Enrico Santi, IEEE Energy Conversion Congress and Exposition (ECCE) Record, pp. 2222-2228, 12-16 September 2010, Atlanta, GA.
  51. “Rotor Losses in Axial-Flux Permanent-Magnet Machines with Non-Overlapped Windings,” J.L. Colton, D.J. Patterson, and J.L. Hudgins, Power Electronics, Machines and Drives Conf. Rec. (PEMD), pp. 1-6, York, UK, 19-20th April, 2010.
  52. “Modeling of MOS-Side Carrier Injection in Trench-Gate IGBTs,” L. Lu, Z. Chen, A. Bryant, J.L. Hudgins, P.R. Palmer and E. Santi, IEEE Trans. on Industry Applications, vol. 46, no. 2, pp. 875-883, March/April 2010.
  53. “Transient Electrothermal Simulation of Power Semiconductor Devices,” B. Du, J.L. Hudgins, E. Santi, A.T. Bryant, P.R. Palmer, and H.A. Mantooth, IEEE Trans. on Power Electronics, vol.25, no. 1, pp. 237-248, January 2010.
  54. “Parameter Extraction Procedure for High Power SiC JFET,” A. Grekov, Z. Chen, E. Santi, J.L. Hudgins, H.A. Mantooth, David Sheridan, and J. Casady, IEEE Energy Conversion Congress and Exposition (ECCE) Record, pp. 1466-1471, 20-24 September 2009, San Jose, CA.
  55. “Modeling and Simulation of a SiC BJT,” T.K. Gachovska, B. Du, J.L. Hudgins, A. Grekov, A. Bryant, E. Santi, H.A. Mantooth, and A. Agarwal, IEEE Energy Conversion Congress and Exposition (ECCE) Record, pp. 979-985, 20-24 September 2009, San Jose, CA.
  56. “Physical Modeling of Large Area 4H-SiC PiN Diodes,” A.T. Bryant, M.R. Jennings, N.-A. Parker-Allotey, P.A. Mawby, A. Perez-Tomas, P. Brosselard, P. Godignon, X. Jorda, J. Millan, P.R. Palmer, E. Santi, and J.L. Hudgins, IEEE Energy Conversion Congress and Exposition Record, pp. 986-993, 20-24 September 2009, San Jose, CA.
  57. “Vertical SiC JFET Model with Unified Description of Linear and Saturation Operating Regions,” Z. Chen, A. Grekov, R. Fu; E. Santi, J.L. Hudgins, H.A. Mantooth, D. Sheridan, and J. Casady, IEEE Energy Conversion Congress and Exposition Record, pp. 2306-2312, 20-24 September 2009, San Jose, CA.
  58. “Wind for Irrigation Application,” F. Parigi, T. Gachovska, J.L. Hudgins, and D.J. Patterson, IEEE Power Electronics and Machines in Wind Applications Symposium Record, Digital Object Identifier: 10.1109/PEMWA.2009.5208331, pp. 1-4, June 24-26, 2009, Lincoln, NE. 
  59. “Maximum Power Extraction from A Small Wind Turbine Using 4-phase Interleaved Boost Converter,” L. Ni, D.J. Patterson, and J.L. Hudgins, IEEE Power Electronics & Machines in Wind Applications Conference Record, Digital Object Identifier: 10.1109/PEMWA.2009.5208329, pp. 1-5, June 24-26, 2009, Lincoln, NE. 
  60. “Generator Design for Existent Windmills: From Water Pumping to Electricity Generation,” J. Colton, D. Patterson, J.L. Hudgins, K. Vacha, IEEE Power Electronics & Machines in Wind Applications Conference Record, Digital Object Identifier: 10.1109/PEMWA.2009.5208330, pp. 1-5, June 24-26, 2009, Lincoln, NE. 
  61. “A Physics-Based Model for a SiC JFET Device Accounting for the Mobility Dependence on Temperature and Electric Field,” F. Chimento, E. Platania, A. Raciti, A. Grekov, E. Santi, J.L. Hudgins, and H.A. Mantooth, IEEE IAS Annual Meeting Rec., Edmonton, Alberta, Canada, pp. 1-8, Oct 5-9, 2008.
  62. “Transient Thermal Analysis of Power Devices Based on Fourier-series Thermal Model,” B. Du, J.L. Hudgins, E. Santi, A.T. Bryant, P.R. Palmer, and H.A. Mantooth, IEEE Power Electronics Specialists Conference Record, Rhodes, Greece, pp. 3129-3135, June 22-26, 2008.
  63. “Model Creation for All Electric Ship (AES) Power Systems,” P.R. Wilson, H.A. Mantooth, E. Santi, and J.L. Hudgins, Society for Modeling and Simulation International Conference Rec., London, UK, June, 2008.
  64. “Certify: A Parameter Extraction Tool for Power Semiconductor Device Models,” W. Li, Y. Feng, P.R. Wilson, H.A. Mantooth, E. Santi, and J.L. Hudgins, Society for Modeling and Simulation International Conference Rec., London, UK, June, 2008.
  65. “Modeling of IGBT Resistive and Inductive Turn-On Behavior,” A.T. Bryant, L. Lu, E. Santi, J.L. Hudgins, and P.R. Palmer, IEEE Transactions on Industry Applications, vol. 44, pp. 904-914, May/June 2008.
  66. “Exploration of Power Device Reliability using Compact Device Models and Fast Electro-Thermal Simulation,” A.T. Bryant, P.A. Mawby, P.R. Palmer, E. Santi, and J.L. Hudgins, IEEE Transactions on Industry Applications, vol. 44, pp. 894-903, May/June 2008.
  67. “Design of a Low-cost and Efficient Integrated Starter-Alternator,” J. Colton, D.J. Patterson, and J.L. Hudgins, Power Electronics, Machines and Drives Conf. Rec. (PEMD), pp. 357-361, York, UK, 2-4 April, 2008.
  68. “Physical Modeling of Fast p-i-n Diodes with Carrier Lifetime Zoning, Part I: Device Model,” A.T. Bryant, L. Lu, E. Santi, P.R. Palmer, and J.L. Hudgins, IEEE Trans. Power Electronics, vol. 23, pp. 189-197, January, 2008.
  69. “Physical Modeling of Fast p-i-n Diodes with Carrier Lifetime Zoning, Part II: Parameter Extraction,” L. Lu, A.T. Bryant, E. Santi, P.R. Palmer, and J.L. Hudgins, IEEE Trans. Power Electronics, vol. 23, pp. 198-205, January, 2008.
  70. “Review of Advanced Power Device Models for Converter Design and Simulation,” A.T. Bryant, P.R. Palmer, E. Santi, J.L. Hudgins, and P.A. Mawby, IET Information and Communication Tech. in Electrical Sciences (ICTES) Conf. Rec., Institution of Engineering and Technology – UK, Chennai, India, pp. 85-90, Dec. 20-22, 2007.
  71. “Preliminary Design, Simulation and Modeling of a Series Hybrid Commuter Vehicle with a Minimal IC Engine,” L. Lu, D.J. Patterson, and J.L. Hudgins, IEEE Vehicle Power and Propulsion Conference Rec., pp. 754-758, Arlington, TX, Sept. 2007.
  72. “Variable Model Levels for Power Semiconductor Devices,” E. Santi, J.L. Hudgins, and H.A. Mantooth, Society for Modeling and Simulation International Conference Rec., Session W13, paper no. 3, San Diego, CA, July, 2007.
  73. “Simulating Power Semiconductor Devices Using Variable Model Levels,” E. Santi, L. Lu, Z. Chen, J.L. Hudgins, and H.A. Mantooth, Society for Modeling and Simulation International Conference Rec., Session W13, paper no. 4, San Diego, CA, July, 2007.
  74. “Simulation and optimization of diode and IGBT interaction in chopper cell using MATLAB and Simulink,” A.T. Bryant, P.R. Palmer, E. Santi, and J.L. Hudgins, IEEE Transactions on Industry Applications, vol. 43, pp. 874-883, July/August 2007.
  75. “A Modular Linear Permanent-Magnet Synchronous Machine with an FPGA Based Controller,” J.L. Colton, D.J. Patterson, J.L. Hudgins, and A. Monti, IEEE International Electric Machines and Drives Conference Record (IEMDC), vol. 2, pp. 1757-1761, Antalya, Turkey, May 3-5, 2007.
  76. “Experiment and simulation studies of current distribution in paralleled thyristors,” J. Wu, Z. Wang, P. R. Palmer, A. T. Bryant, D. Remy, E. Santi and J. Hudgins, IEEE IAS. Annual Mtg. Rec., vol. 5, pp. 2276-2283, Tampa, FL, Oct. 2006.
  77. “Exploration of power device reliability using compact device models and fast electro-thermal simulation,” A.T. Bryant, P.A. Mawby, P.R. Palmer, E. Santi, and J.L. Hudgins, IEEE IAS Annual Mtg. Rec., vol. 3, pp. 1465-1472, Tampa, FL, Oct. 2006.
  78. “Physical Modeling and Parameter Extraction Procedure for p-i-n Diodes with Lifetime Control,” L. Lu, E. Santi, A. Bryant, J.L. Hudgins, and P.R. Palmer, IEEE IAS Annual Mtg. Rec., vol. 3, pp. 1450-1456, Tampa, FL, Oct. 2006.
  79. “Physics-Based Model of IGBT Including MOS Side Two-Dimensional Effects,” L. Lu, A. Bryant, E. Santi, J.L. Hudgins, and P.R. Palmer, IEEE IAS Annual Mtg. Rec., vol. 3, pp. 1457-1464, Tampa, FL, Oct. 2006.
  80. “Expanded Thermal Model for IGBT Modules,” B. Du, J.L. Hudgins, A.T. Bryant, E. Santi, and P.R. Palmer, IEEE IAS Annual Mtg. Rec., vol. 2, pp. 777-784, Tampa, FL, Oct. 2006.
  81. “Destruction-free parameter extraction for a physics-based circuit simulator IGCT model,” X. Wang, J.L. Hudgins, E. Santi, and P.R. Palmer, IEEE Trans. Industry Applications., vol. 42, no. 6, pp. 1395-1402, Nov./Dec. 2006.
  82. “Implementation and Comparison of Models of Conventional Thyristors for System Simulation,” Z. Wang, J. Wu, P.R. Palmer, A.T. Bryant, E. Santi, and J.L. Hudgins, IEEE Power Electronics Specialists Conf. Rec., pp. 1-7, Seoul, Korea, June 18-22, 2006.
  83. “High Speed Electro-Thermal Models for Inverter Simulations,” P.A. Mawby, A.T. Bryant, P.R. Palmer, E. Santi, and J.L. Hudgins, IEEE Rec. of International Conf. Microelectronics, pp. 166-173, Belgrade, Serbia, May 14-17, 2006.
  84. “Two-Step Parameter Extraction Procedure with Formal Optimization for Physics-Based Circuit Simulator IGBT and PIN diode Models,” A.T. Bryant, X. Kang, E. Santi, P.R. Palmer, and J.L. Hudgins, IEEE Trans. Power Electronics, vol. 21, no. 2, pp. 295-309, March 2006.
  85. “Physical Modeling of Forward Conduction in IGBTs and Diodes,” L. Lu, S.G. Pytel, E. Santi, A.T. Bryant, J.L. Hudgins, and P.R. Palmer, IEEE Annual Mtg. Rec., vol. 4, pp. 2635-2642, Hong Kong, Oct. 2005.
  86. “Modeling of IGBT Resistive and Inductive Turn-On Behavior,” L. Lu, S.G. Pytel, E. Santi, A.T. Bryant, J.L. Hudgins, and P.R. Palmer, IEEE Annual Mtg. Rec., vol. 4, pp. 2643-2650, Hong Kong, Oct. 2005.
  87. “A Compact Diode Model for the Simulation of Fast Power Diodes including the Effects of Avalanche and Carrier Lifetime Zoning,” A.T. Bryant, E. Santi, J.L. Hudgins, and P.R. Palmer, IEEE PESC Rec., Recife, Brazil, pp. 2042-2048, June 2005.
  88. “New Developments in Gallium Nitride and the Impact on Power Electronics,” M. A. Khan, G. Simin, S. G. Pytel, A. Monti, E. Santi, and J. L. Hudgins, IEEE PESC Rec., Recife, Brazil, pp. 15-26, June 2005. (Invited plenary paper)
  89. “Gallium Nitride – The Other Wide Bandgap Semiconductor,” J.L. Hudgins, IEEE Power Electronics Society Newsletter, vol. 17, no. 2, pp. 13-15, 2nd Quarter, 2005.  (Invited Article)
  90. “Physics-based modeling of NPT and PT IGBTs at deep cryogenic temperatures,” A. Caiafa, A. Snezhko, J.L. Hudgins, E. Santi, and R. Prozorov, IEEE Annual Mtg. Rec., Seattle, WA, pp. 2536-2541, Oct. 2004.
  91. “Multi-level device models developed for the virtual test bed (VTB),” J.L. Hudgins, A Caiafa, and P.R. Palmer, IAS Annual Mtg. Rec., Seattle, WA, pp. 2528-2535, Oct. 2004.
  92. “Destruction-free parameter extraction for a physics-based circuit simulator IGCT model,” X. Wang, J.L. Hudgins, E. Santi, and P.R. Palmer, IEEE IAS Annual Mtg. Rec., Seattle, WA, pp. 2542-2549, Oct. 2004. 
  93. “Implementation and validation of a physics-based circuit model for IGCT with full temperature dependencies,” X. Wang, A. Caiafa, J.L. Hudgins, E. Santi, and P.R. Palmer, IEEE PESC Rec., Aachen, Germany, pp. 597-603, June 2004.
  94. “The failure of punch-through IGBTs to reach forward conduction mode at low temperatures,” A. Caiafa, A. Snezhko, J.L. Hudgins, E. Santi, and R. Prozorov, IEEE PESC Rec., Aachen, Germany, pp. 2967-2970, June 2004.
  95. “IGBT operation at cryogenic temperatures: non-punch-through and punch-through comparison,” A. Caiafa, A. Snezhko, J.L. Hudgins, E. Santi, and R. Prozorov, IEEE PESC Rec., Aachen, Germany, pp. 2960-2966, June 2004.
  96. “FPGA based sliding mode control for high frequency power converters,” S. Lentijo, S.G. Pytel, A. Monti, J.L. Hudgins, E. Santi, and G. Simin, IEEE PESC Rec., Aachen, Germany, pp. 3588-3592, June 2004.
  97. “Cryogenic germanium power diode circuit simulator model including temperature dependent effects,” S.G. Pytel, A.S. Hoenshel, L. Lu, E. Santi, J.L. Hudgins, and P.R. Palmer, IEEE PESC Rec., Aachen, Germany, pp. 2943-2949, June 2004.
  98. “AlGaN/GaN MOSHFET integrated circuit power coverter,” S.G. Pytel, S. Lentijo, A. Koudymov, S. Rai, H. Fatima, V. Adivarahan, A. Chitnis, J. Yang,  J.L. Hudgins, E. Santi, A. Monti, G. Simin, and M. Asif Khan, IEEE PESC Rec., Aachen, Germany, pp. 579-584, June 2004. 
  99. “Temperature effects on trench-gate punch through IGBTs,” X. Kang, A. Caiafa, E. Santi, J.L. Hudgins, and P.R. Palmer, D.Q. Goodwine, and A. Monti, IEEE Trans. Industry Applications, vol. 40, no. 2, pp. 472-482, March/April 2004.
  100. “Power Semiconductor Devices,” J.L. Hudgins, Chapter 17.1, Electronics Engineers Handbook,  5th ed., Donald Christiansen, ed., McGraw-Hill. (Invited contribution to be published in 2004)
  101. “Characterization and modeling of the LPT CSTBT ¾ the 5TH generation IGBT,” X. Kang, X. Wang, L. Lu, E. Santi, J.L. Hudgins, P. Palmer, and J.F. Donlon, IEEE IAS Ann. Mtg. Rec., Salt Lake City, UT, pp. 982-987, Oct. 2003.
  102. “Physical modeling of IGBT turn-on behavior,” X. Kang, X. Wang, L. Lu, E. Santi, J.L. Hudgins, and P. Palmer, IEEE IAS Ann. Mtg. Rec., Salt Lake City, UT, pp. 988-994, Oct. 2003. 
  103. “Temperature effects on IGCT performance,” X. Wang, A. Caiafa, J.L. Hudgins, and E. Santi, IEEE IAS Ann. Mtg. Rec., Salt Lake City, UT, pp. 1006-1011, Oct. 2003.
  104. “Circuit simulator models for the diode and IGBT with full temperature dependent features,” P.R. Palmer, E. Santi, J.L. Hudgins, X. Kang, J.C. Joyce, and P.Y. Eng, IEEE Trans. Power Electronics, vol. 18, no.5, pp. 1220-1229, Sept. 2003.
  105. “Characterization and modeling of high voltage field-stop IGBTs,” X. Kang, A. Caiafa, E. Santi, J.L. Hudgins, and P.R.. Palmer, IEEE Trans. Industry Applications, vol. 39, no. 4, pp. 922-928, July 2003.
  106. “Wide and narrow bandgap semiconductors for power electronics,” J.L. Hudgins, IEEE/TMMS Jnl. Electronic Materials, vol. 32, no. 6, pp. 471-477, June 2003.
  107. “Simulation of an ARCP converter with physics-based circuit simulator device models,” X. Kang, A. Caiafa, E. Santi, J.L. Hudgins, and P.R. Palmer, IEEE PESC Rec., Acapulco, Mexico, pp. 1904-1909, June 23, 2003.
  108. “The use of a formal optimisation procedure in automatic parameter extraction of power semiconductor devices,” A.T. Bryant, P.R. Palmer, J.L. Hudgins, E. Santi, and X. Kang, IEEE PESC Rec., Acapulco, Mexico, pp. 822-827, June 23, 2003.
  109. “Cryogenic study and modeling of IGBTs,” A. Caiafa, X. Wang, J. Hudgins, and E. Santi, IEEE PESC Rec., Acapulco, Mexico, pp. 15-19, June 23, 2003.
  110. “A new assessment of wide bandgap semiconductors for power devices,” J.L Hudgins, G.S. Simin, E. Santi, and M.A. Khan, IEEE Trans. Power Electronics, vol. 18, no. 3, pp. 907-914, May 2003.
  111. “Parameter extraction for a physics-based circuit simulator IGBT model,” X. Kang, E. Santi, J.L. Hudgins, P.R. Palmer and J.F. Donlon, IEEE APEC Rec., Miami, FL, pp. 946-952, Feb. 2003.
  112. “Simulation and optimisation of diode and IGBT interaction in a chopper cell using MATLAB and Simulink,” P.R. Palmer, A.T. Bryant, J.L. Hudgins and E. Santi, IEEE IAS Ann. Mtg. Rec., Pittsburgh, pp. 2437-2444, October 2002.
  113. “Characterization and modeling of high-voltage field-stop IGBTs,” X. Kang, A. Caiafa, E. Santi, J.L. Hudgins, and P.R. Palmer, IEEE IAS Ann. Mtg. Rec., Pittsburgh, pp. 2175-2181, October 2002.
  114. “Low temperature characterization and modeling of IGBTs,” X. Kang, A. Caiafa, E. Santi, J.L. Hudgins, and P.R. Palmer, IEEE PESC Rec., pp. 1277-1282, Cairns, Australia, June 2002.
  115. “A new assessment of the use of wide bandgap semiconductors and the potential for GaN,” J.L Hudgins, G.S. Simin, and M.A. Khan, IEEE PESC Rec., pp. 1747-1752, Cairns, Australia, June 2002.
  116. “Control system laboratory: a power electronics teaching experience,” J.L. Hudgins, A.Monti, and R.A. Dougal, IEEE COMPEL Rec., pp. 112-116, Mayaguez, Puerto Rico, June 2002.
  117. “Parameter extraction for a power diode circuit simulator model including temperature dependent effects,” X. Kang, A. Caiafa, E. Santi, J.L. Hudgins, and P.R. Palmer, IEEE APEC Rec., pp. 452-458, Dallas, March, 2002.
  118. “Temperature effects on trench-gate IGBTs,” E. Santi, A. Caiafa, X. Kang, J.L. Hudgins, P.R. Palmer, D. Goodwine, and A. Monti, IEEE IAS Ann. Mtg. Rec., pp. 1931-1937, Chicago, October 2001.
  119. “Circuit simulator models for the diode and IGBT with full temperature dependent features,” P.R. Palmer, J.C. Joyce, P.Y. Eng, J.L. Hudgins, E. Santi, and R.A. Dougal, IEEE PESC Rec., pp. 470-476, Vancouver, June 2001.
  120. “Thyristors,” J.L. Hudgins, E. Santi, A. Caiafa, K. Lengel, and P.R. Palmer, Ch. 3, Power Electronics Handbook, Academic Press, San Diego, pp. 27-54, 2001. (Invited Contribution)
  121. “The Evolution of integrating writing into engineering: tracing iterations of writing instruction in a sophomore engineering course,” D. Ramey and J.L. Hudgins, IEEE FIE Conf. Rec., pp. 13B5/1-13B5/5, Nov., 1999.
  122. “The New Paradigm in Power Electronics Design,” J.L. Hudgins, J. Mookken, B. Beker, and R.A. Dougal, IEEE PEDS Rec., pp. 1-6, July, 1999. (Keynote Paper)
  123. “Application of the virtual test bed in the design of power electronic building blocks,” B. Beker, J.L. Hudgins, G. Cokkinides, R.A. Dougal, R. Lewis, and J. Mookken, PCIM Power Electronics Conf. Rec., pp. , November, 1998.
  124. “Inverter Thyristors,” J.L. Hudgins, Encyclopedia of Electrical and Electronics Engineering, J.G. Webster, ed., vol. 10, pp. 686-696, John Wiley & Sons, 1998. (Invited Contribution)
  125. “The effects due to package parasitics of a PEBB-1 module in an ARCP circuit,” R.A. Lewis and J.L. Hudgins, IEEE PESC Rec., pp. 1951-1956, May, 1998.
  126. “Switching characteristics of an asymmetrical complementary 4H-SiC gate turn-off (GTO) thyristor,” J.L. Hudgins, J. Mookken, R.A. Lewis, J.B. Casady, A. Agarwal, and S. Seshadri,      IEEE IAS Ann. Mtg. Rec., pp. 1000-1005, Oct., 1997.
  127. "Extraction of parasitic circuit elements in a PEBB for application in the virtual test bed,” B. Beker, J.L. Hudgins, J. Coronati, B. Gillett, and S. Shekhawat, IEEE IAS Ann. Mtg. Rec., pp. 1217-1221, Oct., 1997.
  128. “Thermal Analysis of high power modules,” C.V. Godbold, V.A. Sankaran, and J.L. Hudgins, IEEE Trans. PEL, vol. 12, no. 1, pp. 3-11, Jan. 1997.
  129. “Power Semiconductor Devices,” J.L. Hudgins, Sections 19-1 to 19-5, Electronics Engineers Handbook, Donald Christiansen, ed., McGraw-Hill, 1996.  (Invited Contribution). 
  130. “Review of technologies for current-limiting low-voltage circuit breakers,” C.W. Brice, R.A. Dougal, and J.L. Hudgins, IEEE Trans. IA, vol. 32, no. 5, pp. 1005-1010, Sept/Oct, 1996.
  131. “Novel designs in power modules,” C.V. Godbold, V.A. Sankaran, and J.L. Hudgins, IEEE IAS Ann. Mtg. Rec., pp. 911-915, Oct., 1995.
  132. “Teaming in the design laboratory,” J.S. Byrd and J.L. Hudgins, ASEE Jnl. Engrg. Ed., vol. 84, no. 4, pp. 335-342, Oct., 1995.
  133. “Streamer model for ionization growth in a photoconductive power switch,” J.L. Hudgins, D.W. Bailey, and R.A. Dougal, IEEE Trans. PEL, vol. 10, pp. 615-620, Sept., 1995. 
  134. "A comparison of power module transistor stacks," C.V. Godbold, V.A. Sankaran, and J.L. Hudgins,  IEEE PESC Rec., pp. 3-9, June, 1995.  (Chosen for Opening Plenary Session)
  135. “Review of technologies for current-limiting low-voltage circuit breakers,” C.W. Brice, R.A. Dougal, and J.L. Hudgins, IEEE I & CPS Conf. Rec. pp. 41-47, May, 1995. 
  136. “Thermal analysis of high power modules,” C.V. Godbold, V.A. Sankaran, and J.L. Hudgins, IEEE APEC Rec., pp. 140-146, Mar., 1995.
  137. "Temperature effects on GTO characteristics," J.L. Hudgins, C.V. Godbold, W.M. Portnoy, and O.M. Mueller, IEEE Industry Appl. Soc. Ann. Mtg. Rec., pp. 1182-1186, Oct., 1994.
  138. "MOS-gated thyristors (MCTs) for high power switching," S.B. Bayne, W.M. Portnoy, G.J. Rohwein, and J.L. Hudgins, IEEE Pwr. Mod. Symp. Rec., pp. 75-77, June, 1994.
  139. "High energy pulse switching characteristics of thyristors," V.A. Sankaran, J.L. Hudgins, and W.M. Portnoy, IEEE Tran. PEL, vol. 11, pp. 347-354, Oct., 1993.
  140. "High gain photoconductive switching," R.A. Dougal, D.W. Bailey, and J.L. Hudgins, Proc. of Sixth BMDO/ONR Pulse Power Mtg., August, 1993.
  141. "The low temperature gating characteristics of thyristors," S. Menhart, J.L. Hudgins, and W.M. Portnoy, IEEE Tran. IA, vol. 29, pp. 802-805, Jul./Aug., 1993.
  142. "Temperature variation effects in MCTs, IGBTs, and BMFETs," C.V. Godbold, J.L. Hudgins, C. Braun, and W.M. Portnoy, IEEE PESC Rec., pp. 93-98, June, 1993.
  143. "Diodes and Rectifiers," J.L. Hudgins, Chapter 5 of The Electrical Engineering Handbook, R. Dorf, Ed., CRC Press, Boca Raton, pp. 126-132, 1993. (Invited Contribution)
  144. "A streamer propagation model for high gain photoconductive switching," D.W. Bailey, R.A. Dougal, and J.L. Hudgins, Proc. SPIE OE/LASE '93, January, 1993. (Invited Paper)
  145. "A review of modern power semiconductor electronic devices," J.L. Hudgins, Microelectronics Journal, vol. 24, pp. 41-54, Jan., 1993. (Invited Paper)
  146. "Temperature variation effects on the switching characteristics of bipolar mode FETs (BMFETs)," S. Menhart, J.L. Hudgins, C.V. Godbold, and W.M. Portnoy, IEEE Conf. Rec. of the IAS Ann. Mtg., Oct., 1992.
  147. "Streamer closure of high gain photoconductive switches," R.A. Dougal, D.W. Bailey, and J.L. Hudgins, Proc. of Fifth SDIO/ONR Pulse Power Mtg., August, 1992.
  148. "Optical figure of merit for high gain photoconductive switching," R.A. Dougal, J.L. Hudgins, and D.W. Bailey, IEEE Pwr. Mod. Sym., June, 1992.
  149. "The low temperature behavior of thyristors," S. Menhart, J.L. Hudgins, and W.M. Portnoy, IEEE Tran. ED, vol. 39, no. 4, pp. 1011-1013, April, 1992.
  150. "A numerical approach based on transient thermal analysis to estimate the safe operating frequencies of thyristors," V.A. Sankaran, J.L. Hudgins, C.A. Rhodes, and W.M. Portnoy, IEEE Tran. PEL, vol. PE-6, no. 4, pp. 679-686, Oct., 1991.
  151. "Repetitive switching using thyristors for high energy and high di/dt applications," V.A. Sankaran and J.L. Hudgins, IEEE 1991 PESC Record, pp. 430 - 436, June, 1991.
  152. "The low temperature gating characteristics of thyristors," S. Menhart, J.L. Hudgins, and W.M. Portnoy, IEEE Conf. Rec. of the IAS Ann. Mtg., October, 1991.
  153. "Temperature variation effects on the switching characteristics of MOS-gate devices," J.L. Hudgins, S. Menhart, W.M. Portnoy, and V.A. Sankaran, 1991 EPE - MADEP Conf. Rec., pp. 262-266, September, 1991.
  154. "Comparison of GTOs and SCRs for high di/dt switching," C.E. Kennedy, J.L. Hudgins, V.A. Sankaran, and W.M. Portnoy, IEEE Conf. Rec. of the IAS Ann. Mtg., October, 1990, pp. 1643 - 1647.
  155. "Comparison of MOS devices for high frequency inverters," J.L. Hudgins, W.W. Glen, S. Menhart, and W.M. Portnoy, IEEE Conf. Rec. of the IAS Ann. Mtg., October, 1990, pp. 1594 - 1596.
  156. "The low temperature switching performance of thyristors and MOSFETs," S. Menhart, J.L. Hudgins, and W.M. Portnoy, IEEE Proc. 21st Power Electronics Specialists Conference, pp. 429 - 434, June, 1990.
  157. "Transient thermal analysis of thyristors using finite element method," V.A. Sankaran, J.L. Hudgins, C.A. Rhodes, and W.M. Portnoy, IEEE Proc. 21st Power Electronics Specialists Conference, pp. 422 - 428, June, 1990.
  158. "The low temperature behavior of SCRs," J.L. Hudgins, S. Menhart and W.M. Portnoy, IEEE Proc. 21st Power Electronics Specialists Conference, pp. 435 - 442, June, 1990.
  159. "Role of the amplifying gate in the turn-on process of involute structure thyristors," V.A. Sankaran, J.L. Hudgins, and W.M. Portnoy, IEEE Tran. PEL, vol. 5, no. 2, pp. 125 - 132, April, 1990.
  160. "Comparison of the MCT and MOSFET for a high frequency inverter," J.L. Hudgins, D.F. Blanco, S. Menhart, and W.M. Portnoy, IEEE Conf. Rec. of the IAS Ann. Mtg., pp. 1255 - 1259, October, 1989.
  161. "Improved thyristor switching using a ferrite element," J.L. Hudgins and K.M. Marks, Proc. IEEE Southeastcon '89, pp. 444 - 448, April, 1989.
  162. "High di/dt switching with thyristors," J.L. Hudgins, V.A. Sankaran, W.M. Portnoy, and K.M. Marks, Proc. IEEE 18th Power Modulator Symposium, pp. 292 - 298, June, 1988.
  163. "Gating of thyristors for laser power supplies," J.L. Hudgins and W.M. Portnoy, Proc. Society of Photo-Optical Instrumentation Engineers Conference, vol. 735, Los Angeles, CA, pp. 68 - 73, 1987.
  164. "High di/dt pulse switching of thyristors," J.L. Hudgins and W.M. Portnoy, IEEE Tran. PEL, vol. 2, pp. 143 - 148, April, 1987.
  165. "Gating effects on thyristor anode current di/dt," J.L. Hudgins and W.M. Portnoy, IEEE Tran. PEL, vol. 2, pp. 149 - 153, April, 1987.
  166. "Fast transient behavior of thyristor switches," J.L. Hudgins and W.M. Portnoy, IEEE PESC Rec., Toulouse, France, pp. 458 - 462, June, 1985.